A study on free-standing 3C-SiC bipolar power diodes

A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most had been grown on Si, and power device fabrication had, therefore, hindered by issues, such as high defect density limited processing temperature, while devices were necessarily to lateral structures. In this work, we present the characterization of a vertical PiN diode using bulk material. p-type ohmic contact was obtained Al implanted regions with specific resistance ∼10−3 Ω cm2. The fabricated has forward drop 2.7 V at 1000 A/cm2, on–off ratio ±3 is 109. An ideality factor 1.83–1.99 achieved, blocking ∼110 observed single-zone junction termination design.